JFET JFET P-Channel 25V Low Noise
Products specifications
| Configuration | Single |
| Rds On - Drain-Source Resistance | 300 Ohms |
| Technology | Si |
| Packaging | Bulk |
| Vgs - Gate-Source Breakdown Voltage | 25 V |
| Pd - Power Dissipation | 300 mW |
| Drain-Source Current at Vgs=0 | - 2 mA |
| Transistor Polarity | P-Channel |
| Mounting Style | Through Hole |