JFETs JFET N-Channel -30V Low Noise
Products specifications
| Transistor Polarity | N-Channel |
| Configuration | Single |
| Vgs - Gate-Source Breakdown Voltage | - 40 V |
| Rds On - Drain-Source Resistance | 40 Ohms |
| Technology | Si |
| Drain-Source Current at Vgs=0 | 100 mA |
| Mounting Style | Through Hole |
| Packaging | Bulk |
| Pd - Power Dissipation | 1.8 W |