JFETs JFET N-Channel -30V Low Noise
Products specifications
|
Transistor Polarity
|
N-Channel |
|
Configuration
|
Single |
|
Vgs - Gate-Source Breakdown Voltage
|
- 40 V |
|
Rds On - Drain-Source Resistance
|
40 Ohms |
|
Technology
|
Si |
|
Drain-Source Current at Vgs=0
|
100 mA |
|
Mounting Style
|
Through Hole |
|
Packaging
|
Bulk |
|
Pd - Power Dissipation
|
1.8 W |