JFETs JFET N-Channel(Dual) -40V Low Noise
Lead Time: 0 Days
Products specifications
| Pd - Power Dissipation | 650 mW |
| Vgs - Gate-Source Breakdown Voltage | - 40 V |
| Rds On - Drain-Source Resistance | 100 Ohms |
| Technology | Si |
| Drain-Source Current at Vgs=0 | 30 mA |
| Packaging | Bulk |
| Transistor Polarity | N-Channel |
| Configuration | Dual |
| Mounting Style | Through Hole |