2SA1020

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Bipolar Transistors - BJT 1W High Current PNP

SKU: 2SA1020

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Bipolar Transistors - BJT 1W High Current PNP

Products specifications

Manufacturer	ON Semiconductor
Product Category	Bipolar Transistors - BJT
RoHS	N
Mounting Style	Through Hole
Package/Case	TO-92-3
Transistor Polarity	PNP
Configuration	Single
Collector- Emitter Voltage VCEO Max	50 V
Collector- Base Voltage VCBO	50 V
Emitter- Base Voltage VEBO	5 V
Collector-Emitter Saturation Voltage	0.5 V
Maximum DC Collector Current	2 A
Pd - Power Dissipation	900 mW
Gain Bandwidth Product fT	100 MHz
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Packaging	Bulk
Height	7.87 mm
Length	5.21 mm
Technology	Si
Width	4.19 mm
Brand	ON Semiconductor
Continuous Collector Current	2 A
DC Collector/Base Gain hFE Min	70
Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	5000
Subcategory	Transistors

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Products specifications

Manufacturer	ON Semiconductor
Product Category	Bipolar Transistors - BJT
RoHS	N
Mounting Style	Through Hole
Package/Case	TO-92-3
Transistor Polarity	PNP
Configuration	Single
Collector- Emitter Voltage VCEO Max	50 V
Collector- Base Voltage VCBO	50 V
Emitter- Base Voltage VEBO	5 V
Collector-Emitter Saturation Voltage	0.5 V
Maximum DC Collector Current	2 A
Pd - Power Dissipation	900 mW
Gain Bandwidth Product fT	100 MHz
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Packaging	Bulk
Height	7.87 mm
Length	5.21 mm
Technology	Si
Width	4.19 mm
Brand	ON Semiconductor
Continuous Collector Current	2 A
DC Collector/Base Gain hFE Min	70
Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	5000
Subcategory	Transistors