SiC MOSFETs 650V/30MOSICFETG3TO220-3
Lead Time: 217 Days
Products specifications
| Channel Mode | Enhancement |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Maximum Operating Temperature | + 175 C |
| Rds On - Drain-Source Resistance | 35 mOhms |
| Vgs - Gate-Source Voltage | 25 V |
| Pd - Power Dissipation | 441 W |
| Qg - Gate Charge | 51 nC |
| Technology | SiC |
| Id - Continuous Drain Current | 85 A |
| Packaging | Tube |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Mounting Style | Through Hole |
| Minimum Operating Temperature | - 55 C |