SiC MOSFETs 650V/80MOSICFETG3TO263-3
Lead Time: 154 Days
Products specifications
| Rds On - Drain-Source Resistance | 100 mOhms |
| Technology | SiC |
| Maximum Operating Temperature | + 175 C |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Pd - Power Dissipation | 115 W |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Configuration | Single |
| Vgs - Gate-Source Voltage | 25 V |
| Channel Mode | Enhancement |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Minimum Operating Temperature | - 55 C |
| Id - Continuous Drain Current | 25 A |
| Qg - Gate Charge | 51 nC |