SiC MOSFETs 1200V/80MOSICFETG3TO247-3
Lead Time: 217 Days
Products specifications
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Vgs - Gate-Source Voltage | 25 V |
| Configuration | Single |
| Technology | SiC |
| Qg - Gate Charge | 51 nC |
| Packaging | Tube |
| Vds - Drain-Source Breakdown Voltage | 1.2 kV |
| Id - Continuous Drain Current | 33 A |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Channel Mode | Enhancement |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 254.2 W |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Rds On - Drain-Source Resistance | 100 mOhms |