JFETs 650V/25MOSICJFETG3TO247-3
Lead Time: 140 Days
Products specifications
| Technology | SiC |
| Rds On - Drain-Source Resistance | 25 mOhms |
| Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 441 W |
| Vgs - Gate-Source Breakdown Voltage | - 20 V to 20 V |
| Id - Continuous Drain Current | 85 A |
| Configuration | Single |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Transistor Polarity | N-Channel |
| Packaging | Tube |
| Minimum Operating Temperature | - 55 C |
| Mounting Style | Through Hole |