JFETs 650V/25MOSICJFETG3TO247-3
Lead Time: 210 Days
Products specifications
|
Technology
|
SiC |
|
Rds On - Drain-Source Resistance
|
25 mOhms |
|
Maximum Operating Temperature
|
+ 175 C |
|
Pd - Power Dissipation
|
441 W |
|
Vgs - Gate-Source Breakdown Voltage
|
- 20 V to 20 V |
|
Id - Continuous Drain Current
|
85 A |
|
Configuration
|
Single |
|
Vds - Drain-Source Breakdown Voltage
|
650 V |
|
Transistor Polarity
|
N-Channel |
|
Packaging
|
Tube |
|
Minimum Operating Temperature
|
- 55 C |
|
Mounting Style
|
Through Hole |