JFETs 1200V/35MOSICJFETG3TO247-3
Lead Time: 140 Days
Products specifications
| Pd - Power Dissipation | 429 W |
| Id - Continuous Drain Current | 63 A |
| Vds - Drain-Source Breakdown Voltage | 1200 V |
| Technology | SiC |
| Mounting Style | Through Hole |
| Transistor Polarity | N-Channel |
| Minimum Operating Temperature | - 55 C |
| Rds On - Drain-Source Resistance | 35 mOhms |
| Configuration | Single |
| Vgs - Gate-Source Breakdown Voltage | 20 V |
| Maximum Operating Temperature | + 175 C |
| Packaging | Tube |