Bipolar Transistors - BJT 55V 3A 1.75W NPN Power BJT THT
Products specifications
| Mounting Style | Through Hole |
| Collector-Emitter Saturation Voltage | 750 mV |
| Collector- Base Voltage VCBO | 100 V |
| Collector- Emitter Voltage VCEO Max | 55 V |
| Emitter- Base Voltage VEBO | 12 V |
| Transistor Polarity | NPN |
| Maximum DC Collector Current | 3 A |
| Technology | Si |
| Minimum Operating Temperature | - 65 C |
| Maximum Operating Temperature | + 200 C |
| Configuration | Single |