Bipolar Transistors - BJT
Products specifications
| Mounting Style | Through Hole |
| Transistor Polarity | NPN |
| Configuration | Dual |
| Collector-Emitter Saturation Voltage | 0.3 V |
| Collector- Base Voltage VCBO | 100 V |
| Maximum DC Collector Current | 500 mA |
| Emitter- Base Voltage VEBO | 7 V |
| Technology | Si |
| Maximum Operating Temperature | + 200 C |
| Minimum Operating Temperature | - 65 C |
| Collector- Emitter Voltage VCEO Max | 60 V |