Bipolar Transistors - BJT 60V 50mA 350mW Dual Small-Signal BJT THT
Products specifications
| Emitter- Base Voltage VEBO | 5 V |
| Collector- Base Voltage VCBO | 60 V |
| Maximum Operating Temperature | + 200 C |
| Technology | Si |
| Maximum DC Collector Current | 50 mA |
| Mounting Style | Through Hole |
| Configuration | Dual |
| Minimum Operating Temperature | - 65 C |
| Transistor Polarity | PNP |
| Collector-Emitter Saturation Voltage | 200 mV |
| Collector- Emitter Voltage VCEO Max | 60 V |