Bipolar Transistors - BJT Power BJT
Products specifications
| Collector- Emitter Voltage VCEO Max | 50 V |
| Collector- Base Voltage VCBO | 65 V |
| Collector-Emitter Saturation Voltage | 0.75 V |
| Emitter- Base Voltage VEBO | 5 V |
| Mounting Style | Through Hole |
| Gain Bandwidth Product fT | 8 MHz |
| Technology | Si |
| Transistor Polarity | PNP |
| Configuration | Single |