Bipolar Transistors - BJT Dual Small-Signal BJT
Products specifications
| Collector- Emitter Voltage VCEO Max | 40 V |
| Emitter- Base Voltage VEBO | 6 V |
| Maximum DC Collector Current | 600 mA |
| Collector-Emitter Saturation Voltage | 0.9 V |
| Transistor Polarity | NPN |
| Configuration | Dual |
| Collector- Base Voltage VCBO | 75 V |
| Technology | Si |
| Minimum Operating Temperature | - 65 C |
| Maximum Operating Temperature | + 200 C |