MOSFET Modules MOSFET MOS7 1000 V 35 Ohm SOT-227
Products specifications
| Pd - Power Dissipation | 520 W |
| Mounting Style | Chassis Mount |
| Configuration | Single |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Channel Mode | Enhancement |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Qg - Gate Charge | 186 nC |
| Id - Continuous Drain Current | 25 A |
| Vds - Drain-Source Breakdown Voltage | 1 kV |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Vgs - Gate-Source Voltage | 30 V |
| Rds On - Drain-Source Resistance | 350 mOhms |
| Packaging | Tube |
| Technology | Si |