IGBT Modules IGBT NPT Medium Frequency Single 1200 V 150 A SOT-227
Products specifications
| Pd - Power Dissipation | 830 W |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Packaging | Tube |
| Continuous Collector Current at 25 C | 170 A |
| Product | IGBT Silicon Modules |
| Gate-Emitter Leakage Current | 900 nA |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Collector-Emitter Saturation Voltage | 3.2 V |