MOSFETs MOSFET MOS8 1000 V 18 A TO-247
Lead Time: 140 Days
Products specifications
| Pd - Power Dissipation | 625 W |
| Mounting Style | Through Hole |
| Transistor Polarity | N-Channel |
| Minimum Operating Temperature | - 55 C |
| Tradename | POWER MOS 8 |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Vgs - Gate-Source Voltage | 30 V |
| Vds - Drain-Source Breakdown Voltage | 1 kV |
| Rds On - Drain-Source Resistance | 600 mOhms |
| Qg - Gate Charge | 150 nC |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Id - Continuous Drain Current | 18 A |
| Packaging | Tube |
| Technology | Si |