APT200GT60JR

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IGBT Modules IGBT NPT Medium Frequency Single 600 V 200 A SOT-227

SKU: APT200GT60JR

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IGBT Modules IGBT NPT Medium Frequency Single 600 V 200 A SOT-227

Products specifications

Pd - Power Dissipation	500 W
Collector- Emitter Voltage VCEO Max	600 V
Continuous Collector Current at 25 C	195 A
Packaging	Tube
Configuration	Single
Collector-Emitter Saturation Voltage	2 V
Gate-Emitter Leakage Current	300 nA
Product	IGBT Silicon Carbide Modules
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C

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Products specifications

Pd - Power Dissipation	500 W
Collector- Emitter Voltage VCEO Max	600 V
Continuous Collector Current at 25 C	195 A
Packaging	Tube
Configuration	Single
Collector-Emitter Saturation Voltage	2 V
Gate-Emitter Leakage Current	300 nA
Product	IGBT Silicon Carbide Modules
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C