MOSFETs MOSFET MOS5 200 V 22 mOhm TO-264
Lead Time: 140 Days
Products specifications
| Rds On - Drain-Source Resistance | 22 mOhms |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Pd - Power Dissipation | 520 W |
| Number of Channels | 1 Channel |
| Mounting Style | Through Hole |
| Id - Continuous Drain Current | 100 A |
| Packaging | Tube |
| Vgs - Gate-Source Voltage | 30 V |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Channel Mode | Enhancement |
| Configuration | Single |
| Qg - Gate Charge | 435 nC |