MOSFETs MOSFET MOS8 1200 V 24 A TO-264
Lead Time: 140 Days
Products specifications
| Qg - Gate Charge | 260 nC |
| Packaging | Tube |
| Id - Continuous Drain Current | 24 A |
| Tradename | POWER MOS 8 |
| Rds On - Drain-Source Resistance | 500 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Vds - Drain-Source Breakdown Voltage | 1.2 kV |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 1.040 kW |
| Technology | Si |
| Vgs - Gate-Source Voltage | 30 V |
| Transistor Polarity | N-Channel |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |