MOSFETs MOSFET MOS8 800 V 24 A TO-247
Lead Time: 140 Days
Products specifications
| Channel Mode | Enhancement |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Packaging | Tube |
| Pd - Power Dissipation | 625 W |
| Vgs - Gate-Source Voltage | 30 V |
| Qg - Gate Charge | 150 nC |
| Transistor Polarity | N-Channel |
| Technology | Si |
| Id - Continuous Drain Current | 25 A |
| Configuration | Single |
| Number of Channels | 1 Channel |
| Rds On - Drain-Source Resistance | 310 mOhms |
| Mounting Style | Through Hole |
| Vds - Drain-Source Breakdown Voltage | 800 V |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |