IGBT Modules PM-IGBT-TFS-SBD-SOT227
Products specifications
| Pd - Power Dissipation | 170 W |
| Minimum Operating Temperature | - 55 C |
| Packaging | Tube |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Continuous Collector Current at 25 C | 45 A |
| Maximum Operating Temperature | + 175 C |
| Gate-Emitter Leakage Current | 400 nA |
| Configuration | Single |
| Collector-Emitter Saturation Voltage | 2.05 V |
| Product | IGBT Silicon Modules |