IGBTs IGBT PT MOS 8 Combi 900 V 27 A TO-247
Lead Time: 140 Days
Products specifications
| Maximum Gate Emitter Voltage | 30 V |
| Continuous Collector Current at 25 C | 48 A |
| Configuration | Single |
| Collector-Emitter Saturation Voltage | 2.5 V |
| Mounting Style | Through Hole |
| Technology | Si |
| Packaging | Tube |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Collector- Emitter Voltage VCEO Max | 900 V |
| Pd - Power Dissipation | 223 W |