IGBT Modules PM-IGBT-TFS-SOT227
Products specifications
| Collector-Emitter Saturation Voltage | 1.7 V |
| Continuous Collector Current at 25 C | 55 A |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Gate-Emitter Leakage Current | 500 nA |
| Packaging | Tube |
| Pd - Power Dissipation | 260 W |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Configuration | Single |
| Product | IGBT Silicon Modules |