IGBTs IGBT MOS 8 1200 V 40 A TO-247 MAX
Lead Time: 0 Days
Products specifications
| Configuration | Single |
| Pd - Power Dissipation | 500 W |
| Maximum Operating Temperature | + 150 C |
| Collector-Emitter Saturation Voltage | 2.5 V |
| Packaging | Tube |
| Minimum Operating Temperature | - 55 C |
| Maximum Gate Emitter Voltage | 30 V |
| Technology | Si |
| Continuous Collector Current at 25 C | 88 A |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Mounting Style | Through Hole |