MOSFETs MOSFET MOS8 600 V 43 A TO-247 MAX
Lead Time: 0 Days
Products specifications
| Packaging | Tube |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Rds On - Drain-Source Resistance | 130 mOhms |
| Pd - Power Dissipation | 780 W |
| Tradename | POWER MOS 8 |
| Mounting Style | Through Hole |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Voltage | 30 V |
| Id - Continuous Drain Current | 45 A |
| Technology | Si |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Qg - Gate Charge | 215 nC |
| Channel Mode | Enhancement |