IGBT Modules IGBT PT MOS 8 Combi 900 V 46 A SOT-227
Products specifications
| Product | IGBT Silicon Modules |
| Packaging | Tube |
| Collector-Emitter Saturation Voltage | 2.5 V |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 284 W |
| Collector- Emitter Voltage VCEO Max | 900 V |
| Continuous Collector Current at 25 C | 87 A |
| Gate-Emitter Leakage Current | 100 nA |
| Minimum Operating Temperature | - 55 C |