IGBTs IGBT MOS 8 1200 V 50 A TO-264
Lead Time: 12 Days
Products specifications
| Continuous Collector Current at 25 C | 117 A |
| Collector-Emitter Saturation Voltage | 3.5 V |
| Packaging | Tube |
| Pd - Power Dissipation | 694 W |
| Product | IGBT Silicon Modules |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |