APT50GS60BRDQ2G

IGBT Transistors FG, IGBT-COMBI, 600V, TO-247, RoHS
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SKU: APT50GS60BRDQ2G

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R 206.34

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R 183.27

R 162.51

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IGBT Transistors FG, IGBT-COMBI, 600V, TO-247, RoHS
Lead Time: 0 Days

Products specifications

Collector- Emitter Voltage VCEO Max	600 V
Continuous Collector Current at 25 C	93 A
Minimum Operating Temperature	- 55 C
Maximum Gate Emitter Voltage	30 V
Packaging	Tube
Mounting Style	Through Hole
Collector-Emitter Saturation Voltage	2.8 V
Technology	Si
Maximum Operating Temperature	+ 150 C
Configuration	Single
Pd - Power Dissipation	415 W

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Products specifications

Collector- Emitter Voltage VCEO Max	600 V
Continuous Collector Current at 25 C	93 A
Minimum Operating Temperature	- 55 C
Maximum Gate Emitter Voltage	30 V
Packaging	Tube
Mounting Style	Through Hole
Collector-Emitter Saturation Voltage	2.8 V
Technology	Si
Maximum Operating Temperature	+ 150 C
Configuration	Single
Pd - Power Dissipation	415 W