APT50GT60BRDQ2G

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IGBT Transistors FG, IGBT-COMBI, 600V, TO-247, RoHS
Lead Time: 210 Days

SKU: APT50GT60BRDQ2G

Availability: 8 in stock

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IGBT Transistors FG, IGBT-COMBI, 600V, TO-247, RoHS
Lead Time: 210 Days

Products specifications

Maximum Gate Emitter Voltage	30 V
Mounting Style	Through Hole
Collector-Emitter Saturation Voltage	2 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	446 W
Continuous Collector Current at 25 C	110 A
Configuration	Single
Collector- Emitter Voltage VCEO Max	600 V
Technology	Si
Packaging	Tube

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Products specifications

Maximum Gate Emitter Voltage	30 V
Mounting Style	Through Hole
Collector-Emitter Saturation Voltage	2 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	446 W
Continuous Collector Current at 25 C	110 A
Configuration	Single
Collector- Emitter Voltage VCEO Max	600 V
Technology	Si
Packaging	Tube