MOSFETs POWER MOS 7 MOSFET
Lead Time: 140 Days
Products specifications
| Vgs - Gate-Source Voltage | 30 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Packaging | Tube |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Mounting Style | Through Hole |
| Id - Continuous Drain Current | 57 A |
| Pd - Power Dissipation | 570 W |
| Technology | Si |
| Rds On - Drain-Source Resistance | 75 mOhms |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Qg - Gate Charge | 125 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Configuration | Single |
| Channel Mode | Enhancement |