IGBT Modules IGBT PT MOS 8 Combi 600 V 60 A SOT-227
Lead Time: 20 Days
Products specifications
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 356 W |
| Gate-Emitter Leakage Current | 100 nA |
| Continuous Collector Current at 25 C | 112 A |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Product | IGBT Silicon Modules |
| Minimum Operating Temperature | - 55 C |
| Collector-Emitter Saturation Voltage | 2 V |
| Packaging | Tube |