IGBTs IGBT PT MOS 8 Combi 900 V 64 A TO-264
Products specifications
| Minimum Operating Temperature | - 55 C |
| Mounting Style | Through Hole |
| Maximum Operating Temperature | + 150 C |
| Packaging | Tube |
| Collector- Emitter Voltage VCEO Max | 900 V |
| Maximum Gate Emitter Voltage | 30 V |
| Continuous Collector Current at 25 C | 117 A |
| Configuration | Single |
| Technology | Si |
| Pd - Power Dissipation | 500 W |
| Collector-Emitter Saturation Voltage | 2.5 V |