IGBTs IGBT PT MOS 7 Single 1200 V 75 A TO-247 MAX
Products specifications
| Maximum Gate Emitter Voltage | 30 V |
| Minimum Operating Temperature | - 55 C |
| Packaging | Tube |
| Pd - Power Dissipation | 1.042 kW |
| Mounting Style | Through Hole |
| Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Maximum Operating Temperature | + 150 C |
| Technology | Si |
| Continuous Collector Current at 25 C | 100 A |
| Collector-Emitter Saturation Voltage | 3.3 V |