IGBT Modules IGBT PT MOS 7 Single 1200 V 75 A SOT-227
Lead Time: 18 Days
Products specifications
| Packaging | Tube |
| Maximum Operating Temperature | + 150 C |
| Continuous Collector Current at 25 C | 128 A |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 543 W |
| Product | IGBT Silicon Modules |
| Gate-Emitter Leakage Current | 100 nA |
| Collector-Emitter Saturation Voltage | 3.3 V |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |