IGBTs IGBT MOS 8 1200 V 85 A TO-264
Products specifications
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Configuration | Single |
| Pd - Power Dissipation | 962 W |
| Continuous Collector Current at 25 C | 170 A |
| Product | IGBT Silicon Modules |
| Collector-Emitter Saturation Voltage | 3.5 V |
| Packaging | Tube |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |