APT8M100B

MOSFETs MOSFET MOS8 1000 V 8 A TO-247
Lead Time: 140 Days

SKU: APT8M100B

Availability: 189 in stock

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1+

100+

Price

R 105.60

R 91.25

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MOSFETs MOSFET MOS8 1000 V 8 A TO-247
Lead Time: 140 Days

Products specifications

Qg - Gate Charge	60 nC
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	1.53 Ohms
Id - Continuous Drain Current	8 A
Technology	Si
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Packaging	Tube
Tradename	POWER MOS 8
Pd - Power Dissipation	290 W
Vgs th - Gate-Source Threshold Voltage	4 V
Vgs - Gate-Source Voltage	30 V
Vds - Drain-Source Breakdown Voltage	1 kV

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Products specifications

Qg - Gate Charge	60 nC
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	1.53 Ohms
Id - Continuous Drain Current	8 A
Technology	Si
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Packaging	Tube
Tradename	POWER MOS 8
Pd - Power Dissipation	290 W
Vgs th - Gate-Source Threshold Voltage	4 V
Vgs - Gate-Source Voltage	30 V
Vds - Drain-Source Breakdown Voltage	1 kV