APTGFQ25H120T2G

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IGBT Modules Power Module - IGBT

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IGBT Modules Power Module - IGBT

Products specifications

Gate-Emitter Leakage Current	150 nA
Minimum Operating Temperature	- 40 C
Collector- Emitter Voltage VCEO Max	1.2 kV
Configuration	Quad
Continuous Collector Current at 25 C	40 A
Pd - Power Dissipation	227 W
Maximum Operating Temperature	+ 100 C
Collector-Emitter Saturation Voltage	2.1 V
Product	IGBT Silicon Modules

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Products specifications

Gate-Emitter Leakage Current	150 nA
Minimum Operating Temperature	- 40 C
Collector- Emitter Voltage VCEO Max	1.2 kV
Configuration	Quad
Continuous Collector Current at 25 C	40 A
Pd - Power Dissipation	227 W
Maximum Operating Temperature	+ 100 C
Collector-Emitter Saturation Voltage	2.1 V
Product	IGBT Silicon Modules