IGBT Modules Power Module - IGBT
Products specifications
| Collector-Emitter Saturation Voltage | 1.8 V |
| Pd - Power Dissipation | 750 W |
| Continuous Collector Current at 25 C | 220 A |
| Product | IGBT Silicon Modules |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Maximum Operating Temperature | + 100 C |
| Gate-Emitter Leakage Current | 200 nA |
| Configuration | Dual |
| Packaging | Bulk |
| Minimum Operating Temperature | - 40 C |