IGBT Modules PM-IGBT-TFS-SP3F
Products specifications
| Pd - Power Dissipation | 280 W |
| Product | IGBT Silicon Modules |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Packaging | Tube |
| Minimum Operating Temperature | - 40 C |
| Gate-Emitter Leakage Current | 400 nA |
| Continuous Collector Current at 25 C | 80 A |
| Collector-Emitter Saturation Voltage | 1.8 V |
| Maximum Operating Temperature | + 100 C |