IGBT Modules PM-IGBT-TFS-D3
Products specifications
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Product | IGBT Silicon Modules |
| Maximum Operating Temperature | + 125 C |
| Configuration | Single |
| Minimum Operating Temperature | - 40 C |
| Gate-Emitter Leakage Current | 800 nA |
| Collector-Emitter Saturation Voltage | 1.8 V |
| Continuous Collector Current at 25 C | 840 A |
| Packaging | Bulk |
| Pd - Power Dissipation | 3 kW |