IGBT Modules PM-IGBT-TFS-SP6C
Products specifications
| Collector-Emitter Saturation Voltage | 2.05 V, 1.5 V |
| Gate-Emitter Leakage Current | 480 nA, 400 nA |
| Product | IGBT Silicon Modules |
| Collector- Emitter Voltage VCEO Max | 1.2 kV, 600 V |
| Maximum Operating Temperature | + 100 C |
| Minimum Operating Temperature | - 40 C |
| Configuration | Dual Common Emitter |
| Packaging | Tube |
| Continuous Collector Current at 25 C | 300 A, 150 A |
| Pd - Power Dissipation | 1 kW, 340 W |