IGBT Modules PM-IGBT-TFS-SP1
Lead Time: 168 Days
Products specifications
| Packaging | Tube |
| Maximum Operating Temperature | + 125 C |
| Pd - Power Dissipation | 165 W |
| Continuous Collector Current at 25 C | 50 A |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Product | IGBT Silicon Modules |
| Collector-Emitter Saturation Voltage | 2.05 V |
| Technology | - |
| Gate-Emitter Leakage Current | 150 nA |
| Configuration | Quad |
| Minimum Operating Temperature | - 40 C |