IGBT Modules PM-IGBT-TFS-SP6C
Products specifications
| Collector-Emitter Saturation Voltage | 2.05 V |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Pd - Power Dissipation | 1500 W |
| Continuous Collector Current at 25 C | 500 A |
| Product | IGBT Silicon Modules |
| Packaging | Tube |
| Technology | - |
| Gate-Emitter Leakage Current | 480 nA |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 125 C |
| Configuration | Dual |