IGBT Modules PM-IGBT-TFS-SP3F
Products specifications
| Collector-Emitter Saturation Voltage | 1.85 V |
| Maximum Operating Temperature | + 125 C |
| Pd - Power Dissipation | 175 W |
| Packaging | Tube |
| Technology | - |
| Configuration | Dual |
| Product | IGBT Silicon Modules |
| Gate-Emitter Leakage Current | 150 nA |
| Continuous Collector Current at 25 C | 70 A |
| Minimum Operating Temperature | - 40 C |
| Collector- Emitter Voltage VCEO Max | 650 V |