IGBT Modules PM-IGBT-TFS-SP6C
Products specifications
| Maximum Operating Temperature | + 100 C |
| Product | IGBT Silicon Modules |
| Pd - Power Dissipation | 2 kW |
| Collector- Emitter Voltage VCEO Max | 650 V |
| Packaging | Tube |
| Continuous Collector Current at 25 C | 770 A |
| Minimum Operating Temperature | - 40 C |
| Gate-Emitter Leakage Current | 1 uA |
| Configuration | Dual |
| Collector-Emitter Saturation Voltage | 1.85 V |