IGBT Modules PM-IGBT-TFS-SP1
Lead Time: 168 Days
Products specifications
| Collector- Emitter Voltage VCEO Max | 650 V |
| Packaging | Tube |
| Product | IGBT Silicon Modules |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 100 C |
| Collector-Emitter Saturation Voltage | 1.85 V |
| Configuration | Full Bridge |
| Pd - Power Dissipation | 250 W |
| Gate-Emitter Leakage Current | 200 nA |
| Continuous Collector Current at 25 C | 100 A |