IGBT Modules PM-IGBT-TFS-SP4
Products specifications
| Collector- Emitter Voltage VCEO Max | 600 V |
| Gate-Emitter Leakage Current | 400 nA |
| Packaging | Tube |
| Continuous Collector Current at 25 C | 225 A |
| Product | IGBT Silicon Modules |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 100 C |
| Configuration | Full Bridge |
| Collector-Emitter Saturation Voltage | 1.5 V |
| Pd - Power Dissipation | 480 W |