IGBT Modules PM-IGBT-TFS-D3
Products specifications
| Gate-Emitter Leakage Current | 400 nA |
| Collector-Emitter Saturation Voltage | 2 V |
| Continuous Collector Current at 25 C | 310 A |
| Product | IGBT Silicon Modules |
| Configuration | Dual |
| Maximum Operating Temperature | + 125 C |
| Collector- Emitter Voltage VCEO Max | 1.7 kV |
| Pd - Power Dissipation | 1.25 kW |
| Minimum Operating Temperature | - 40 C |
| Packaging | Bulk |