IGBT Modules PM-IGBT-TFS-SP6C
Products specifications
| Gate-Emitter Leakage Current | 500 nA |
| Continuous Collector Current at 25 C | 280 A |
| Collector-Emitter Saturation Voltage | 1.7 V |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Pd - Power Dissipation | 890 W |
| Product | IGBT Silicon Modules |
| Maximum Operating Temperature | + 100 C |
| Configuration | Single |
| Minimum Operating Temperature | - 40 C |
| Packaging | Tube |